; LAMPADE a RISPARMIO ENERGETICO LAMPADE A LED, INCASSO PAVIMENTO carrabili impermeabili.da soffitto striscie strice led luminose tagliabili bianche e multicolore LABORATORIO ELETTRONICO riparazioni PS2 PSP PS3. PRODOTTI PER AUTO INSTALLAZIONI AUTORADIO RIMAPPATURA CENTRALINE attrezzature da laboratorio Saldatori dissaldatori ad aria calda. obama incontra gli alieni Azienda fornitore Distributore NAZIONALE DI KIT CONVERSIONE FARI ALLO XENO Xenon qualsiasi gradazione di temperatura dai 4300K 6000k 8000k 10000k ai 12000K  Qualsiasi modello di lampada h7 h4 h1 h3 9005 9004 d2s d2r h3b t10 Distribuzione Pannelli solari fotovoltaici Pannelli a collettore solar heater pressurizzati non pressurizzati scalda acqua Regolatore di carica per pannelli solari. Generatore eolico  Inverter onda sinusoidale modificata Inverter onda sinusoidale pura.cellulari telefoni cect  www.piazzarossetti.it CITTA DEL VASTO (CHIETI) Http://cento50shopping.altervista.org ">;

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Televisore LCD LC-52DH77E SHARP 1.099 €
Tipo prodotto 55" TV LCD Serie Aquos Certificazione Televisione Digitale HDTV 1080p Sintonizzatore TV 1x analogico, 1x digitale Interfaccia video Componente, composita, HDMI, SCART N. porte HDMI 3 porte Interfaccia PC VGA (HD-15) Porta USB Sì , 1 porte Compatibile HDCP Si Dimensioni Senza supporto Larghezza 125 cm Profondità 11.2 cm Altezza 81.6 cm Schermo Lunghezza diagonale 55" - widescreen Tecnologia Matrice attiva TFT Risoluzione 1920 x 1080 Formato di visualizzazione 1080p (FullHD) Rapporto altezza/larghezza 16:9 100Hz Sì Profondità colore 2000:1 Rapporto di contrasto dinamico 50000:1 Luminosità 450 cd/m2 Pixel Totali 6,220,800 Scansione progressiva Scansione progressiva (raddoppio linea) Angolo di campo 176 gradi Angolo di visione (verticale) 176 gradi Tempo di risposta del pixel 4 ms Durata retroilluminazione 60,000 ora/e Filtro a pettine Digitale 3D Caratteristiche On-screen menu, riproduzione foto JPEG Sintonizzatore TV Sintonizzatore TV analogico PAL, SECAM Sistema di ricezione SECAM-D, SECAM-B, SECAM-K, PAL-B, SECAM-G, PAL-G, PAL-I, PAL-D, SECAM-L, PAL-K Sistema di ricezione stereo NICAM Caratteristiche video HDTV Ready Sì Segnale ingresso video analogico NTSC, PAL, SECAM Teletext Sì Memoria teletext 2000 pagine Memoria teletext Sì Guida programmi elettronica Digital EPG Blocco canale bambini Sì Telecomando Tipo Telecomando - infrarosso Sistema audio Modalità uscita audio Stereo Modalità surround Sì Altoparlanti Inclusi 2 altoparlanti Potenza di uscita / totale 20 Watt Caratteristiche aggiuntive Regolazione automatica del volume Altoparlanti 2 x altoparlante canale destro/sinistro - integrato - 10 Watt Connessioni Tipo connettore 2 x SCART ( SCART 21-pin ) ¦ 3 x HDMI ( HDMI a 19 pin, tipo A ) ¦ 1 x USB ( USB Tipo A 4-pin ) ¦ 1 x ingresso componente video ( RCA phono x 3 ) ¦ 1 x ingresso audio/video composito ( RCA phono x 3 ) ¦ 1 x Ingresso VGA ( 15 PIN HD D-Sub (HD-15) ) ¦ 1 x uscita linea audio ( Fono RCA x 2 ) ¦ 1 x uscita audio digitale (ottico) ( TOSLINK ) ¦ 1 x seriale Alimentazione Dispositivi di alimentazione Alimentatore - interna Tensione richiesta 230 V c.a. ( 50 Hz ) Potenza assorbita stand by / sleep 0.2 Watt Potenza assorbita in esercizio 252 Watt Dettagli dimensioni e peso Dettagli dimensioni e peso Pannello con supporto - 125 cm x 32.5 cm x 86.4 cm x 27.5 kg ¦ Pannello senza supporto - 125 cm x 11.2 cm x 81.6 cm Supporti ed elementi di montaggio Supporto incluso Sì Design supporto Da tavolo Interfaccia di montaggio schermo piatto Sì Sintonizzatore TV digitale Sintonizzatore TV digitale TNT HD Sintonizzatore TV digitale MPEG2 MP@HL, MPEG2 MP@ML, MPEG4 AVC/H.264 HP@L4
ENTRA ENTRA
CHI SIAMO
Center Light Technology Limited is Established in 2006, Invested by Elec-Search Group and LightingPower Group ,Cento50shopping Group we are specialized in developing and manufacturing LED products including various Led bulbs, LED spotlights, LED ceiling lights, LED car lights, panel lights, LED stage lights, LED strip lights and LED modules. Light Center Technology Limited è Fondata nel 2006, investito da Elec-Group Ricerca e LightingPower group, Cento50shopping grpup, siamo specializzati nello sviluppo e nella fabbricazione dei prodotti, tra cui vari LED Led bulbi, i proiettori a LED, LED plafoniere, luci LED auto, pannello luci, luci LED fase , striscia LED luci LED e moduli. In order to satify demand of customers, we extend our business to electronic products as well as solar products. Al fine di soddisfare la domanda dei clienti, estendiamo la nostra attività per prodotti elettronici come pure i prodotti solari. Manufacturing facilities are covered an area of 3,000 square meters, our annual output volume are now valued almost USD8,000,000. Impianti di produzione occupano un area di 3000 metri quadrati, il nostro volume di produzione annuale sono ora valutati circa € 6.000.000 Advanced equipment, professional workforce, and precise QC inspection system ensure that our products can meet clients' requirements. Attrezzature avanzate, lavoro professionale, e preciso sistema di controllo qualità assicura che i nostri prodotti in grado di soddisfare i clienti 'requisiti. Our manufacturing facilities and high volume production ability keep our price at very competitive level. I nostri impianti di produzione ad alto volume di produzione e mantenere la nostra capacità di prezzo molto competitivo a livello. Meanwhile, speedy production and timely delivery is our service commitment to clients. Nel frattempo, la produzione rapida e tempestiva consegna sono il nostro impegno di servizio alla clientela. We have a team of professionals who own diverse corporate and technical backgrounds and experiences providing expertise across a broad spectrum of industries. Abbiamo un team di professionisti che possiedono diversi contesti aziendali e tecnica offrendo le proprie competenze ed esperienze su un ampio spettro di settori. In addition, we always pursue the combination of elegant design and economic utility for our products. Inoltre, abbiamo sempre perseguire la combinazione di un design elegante e di utilità economica per i nostri prodotti. We study clients' business environment and operations from an overall perspective, as well as the technical aspect, to better understand our clients. Abbiamo clienti studio 'ambiente imprenditoriale e le operazioni da una prospettiva globale, così come l'aspetto tecnico, per capire meglio i nostri clienti. All of these, including our consistent R&D investment keep us a foothold in the world's competitive market. Tutti questi, compreso il nostro costante investimento nella R & S tengono piede nel mondo del mercato concorrenziale. Domestically, we have built a widespread distribution network throughout the mainland. A livello interno, abbiamo costruito una diffusa rete di distribuzione in tutto il continente. On the other hand, our products are also exported to foreign markets including the USA, South Korea, Europe, South Africa, and the Middle East. D'altro canto, i nostri prodotti vengono esportati anche ai mercati esteri tra cui gli Stati Uniti, Corea del Sud, Europa, Sud Africa e il Medio Oriente. We are always trying to expand our business around the world on the foundation of successful cooperation, equality, and mutual trust. Siamo sempre cercando di espandere il nostro business in tutto il mondo sulla base di una proficua cooperazione, l'uguaglianza, e la fiducia reciproca. If you have any queries on our products, please feel free to contact us. Se avete domande sui nostri prodotti, non esitare a contattarci. Cento50shopping@hotmail.it <<<<<<----------- We are looking forward to working together with you to create mutual benefits in the near future. Siamo lieti di collaborare con voi per creare vantaggi reciproci, in un prossimo futuro.

L A V O R I

OFFICE

Fabbrica Indirizzo:

Shangshui Industry Park, Buji Storico, Longgang District, Shenzhen City, Guangdong Province, PRChina
Key Contact: Robert Qiu Chiave di contatto: Robert Qiu
Position: Sales Director Posizione: Direttore Vendite
Department: Overseas Sales Dipartimento: Overseas Sales

Telephone Number: 86-755-89671854 Numero di telefono: 86-755-89671854
Fax Number: 86-755-89671854 Fax: 86-755-89671854
Cell:+86 137 2555 6402 Cell: +86 137 2555 6402
E-mail:info@elec-search.cn E-mail: info@elec-search.cn
Robert.centerlight@gmail.com Robert.centerlight @ gmail.com

International Sales Department International Sales Department

HK Office: HK Ufficio:

Podio Plaza Hanoi 5 Tsimshatsui Road Kowloon HongKong
Tel:00852-31160191 Fax:00852-26020712 Tel :00852-31160191 Fax :00852-26020712

Italy Office: Ufficio Italia:

Italy Office:

Cento50shopping
P.iva 02199630696 Michele Della Guardia  Via Galilei 14  Cupello CHIETI 66051 italy
phone/fax :0039 0873 317189
Mobile Wind : 0039 3209723661
Mobile Vodafone: 0039 3405314260
web: www.cento50shopping.altervista.org mail msn : cento50shopping@hotmail.it skype: cento5anta

RFP25N06, RF1S25N06, RF1S25N06SM Data Sheet January 2002 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09771. Features • 25A, 60V • rDS(ON) = 0.047Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFP25N06 RF1S25N06 RF1S25N06SM PACKAGE TO-220AB TO-262AA TO-263AB BRAND RFP25N06 F1S25N06 F1S25N06 Symbol D G NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S25N06SM9A. S Packaging JEDEC TO- 220AB SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) JEDEC TO-263AB DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation RFP25N06, RF1S25N06, RF1S25N06SM Rev. C RFP25N06, RF1S25N06, RF1S25N06SMS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg RFP25N06, RF1S25N06, RF1S25N06SM 60 60 ±20 25 (Figure 5) (Figure 6) 72 0.48 -55 to 175 300 260 UNITS V V V A W W/oC oC oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250µA, VGS = 0V (Figure 11) VGS = VDS, ID = 250µA (Figure 10) VDS = 60V VGS = 0V TC = 25oC TC = 150oC MIN 60 2 VGS = 0 to 20V VGS = 0 to 10V VGS = 0 to 2V VDD = 48V, ID = 25A, RL = 1.92Ω Ig(REF) = 0.75mA (Figure 13) (Figure 3) TYP 14 30 45 22 975 330 95 MAX 4 1 50 ±100 0.047 60 100 80 45 3 2.083 62 UNITS V V µA µA nA Ω ns ns ns ns ns ns nC nC nC pF pF pF oC/W oC/W Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(10) Qg(TH) CISS COSS CRSS RθJC RθJA VGS = ±20V ID = 25A, VGS = 10V (Figure 9) VDD = 30V, ID = 12.5A RL = 2.4Ω, VGS = 10V RGS = 10Ω (Figure 13) VDS = 25V, VGS = 0V f = 1MHz (Figure 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Reverse Recovery Time SYMBOL VSD trr ISD = 25A ISD = 25A, dISD/dt = 100A/µs TEST CONDITIONS MIN TYP MAX 1.5 125 UNITS V ns ©2002 Fairchild Semiconductor Corporation RFP25N06, RF1S25N06, RF1S25N06SM Rev. C RFP25N06, RF1S25N06, RF1S25N06SM Typical Performance Curves 1.2 Unless Otherwise Specified 30 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) 150 175 ID, DRAIN CURRENT (A) 25 20 15 10 5 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 175 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 2 1 THERMAL IMPEDANCE 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 10-2 10-1 10-3 t1 , RECTANGULAR PULSE DURATION (s) 100 101 PDM ZθJC, NORMALIZED 10-4 FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 200 100 ID, DRAIN CURRENT (A) TC = 25oC TJ = MAX RATED SINGLE PULSE IDM, PEAK CURRENT (A) VGS = 20V 200 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS:  175 – T C I = I 25  ----------------------- 150   VGS = 10V 100 100µs 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1ms 10ms 100ms DC 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 1 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10 -5 10 10-4 10-3 10-2 10-1 t, PULSE WIDTH (s) TC = 25oC 100 101 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY ©2002 Fairchild Semiconductor Corporation RFP25N06, RF1S25N06, RF1S25N06SM Rev. C RFP25N06, RF1S25N06, RF1S25N06SM Typical Performance Curves 100 70 IAS, AVALANCHE CURRENT (A) 60 ID, DRAIN CURRENT (A) STARTING TJ = 25oC 50 40 30 VGS = 6V 20 10 10 0 VGS = 4.5V 0 2 4 6 VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TC = 25oC VGS = 7V VGS = 20V VGS = 10V VGS = 8V Unless Otherwise Specified (Continued) 10 STARTING TJ = 150oC If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) +1] 1 0.01 1 0.1 tAV, TIME IN AVALANCHE (µs) VGS = 5V 8 NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. SATURATION CHARACTERISTICS 70 60 ID, DRAIN CURRENT (A) 50 175oC 40 30 20 10 0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON RESISTANCE 10 VDD = 15V -55oC 25oC 2.5 2.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 25A 1.5 1.0 0.5 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 2.0 NORMALIZED DRAIN TO SOURCE VGS = VDS ID = 250µA NORMALIZED GATE THRESHOLD VOLTAGE 1.5 2.0 ID = 250µA BREAKDOWN VOLTAGE 1.5 1.0 1.0 0.5 0.5 0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 0 -80 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE ©2002 Fairchild Semiconductor Corporation RFP25N06, RF1S25N06, RF1S25N06SM Rev. C RFP25N06, RF1S25N06, RF1S25N06SM Typical Performance Curves 1600 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGD Unless Otherwise Specified (Continued) 60 VDS , DRAIN TO SOURCE VOLTAGE (V) VDD = BVDSS 45 VDD = BVDSS 7.5 10 VGS , GATE TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 1200 CISS 30 0.75 BVDSS 15 0.50 BVDSS 0.25 BVDSS RL = 2.4Ω Ig(REF) = 0.75mA VGS = 10V 0 20 -------------------I g ( ACT ) I g ( REF ) t, TIME (µs) 80 -------------------I g ( ACT ) I g ( REF ) 5.0 800 COSS 2.5 400 CRSS 0 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 25 NOTE: Refer to Fairchild Application Notes AN7254 and AN7260. FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01Ω 0 tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON VDS VDS VGS RL + tOFF td(OFF) tr tf 90% td(ON) 90% DUT RGS VGS - VDD 0 10% 90% 10% VGS 0 10% 50% PULSE WIDTH 50% FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS ©2002 Fairchild Semiconductor Corporation RFP25N06, RF1S25N06, RF1S25N06SM Rev. C RFP25N06, RF1S25N06, RF1S25N06SM Test Circuits and Waveforms (Continued) VDS RL VDD VDS VGS = 20V VGS + Qg(TOT) Qg(10) VDD VGS VGS = 2V 0 Qg(TH) Ig(REF) 0 VGS = 10V DUT Ig(REF) FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORM ©2002 Fairchild Semiconductor Corporation RFP25N06, RF1S25N06, RF1S25N06SM Rev. C RFP25N06, RF1S25N06, RF1S25N06SM PSPICE Electrical Model .SUBCKT RFP25N06 2 1 3 ; rev 8/19/94 CA 12 8 1.83e-9 CB 15 14 1.98e-9 CIN 6 8 9.7e-10 DPLCAP 5 LDRAIN RSCL1 RSCL2 + 51 5 ESCL 51 50 RDRAIN 16 VTO 6 + 21 MOS1 RIN CIN 8 RSOURCE 7 LSOURCE 3 SOURCE DBREAK DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 65.9 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 GATE 10 DRAIN 2 ESG + EVTO + 18 8 6 8 11 17 EBREAK 18 MOS2 + DBODY - LDRAIN 2 5 1e-9 LGATE 1 9 4.92e-9 LSOURCE 3 7 4.5e-9 1 LGATE 9 20 - RGATE MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRA